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  Datasheet File OCR Text:
 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diode
B5818WS
FEATURES Power dissipation PD: 200 mW (Tamb=25)
2.70
1.6
SCHOTTKY BARRIER DIODE
SOD-323
+
1.05
Collector current 1 A IF: Collector-base voltage VR: 30 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 MARKING: SK
0.55
3.70
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Symbol V(BR) IR VF CD
unless
Test
otherwise
specified)
MIN 30 1 0.55 0.875 120 MAX UNIT V
conditions IR= 1mA VR=30V IF=1A IF=3A
mA
V
VR=4V,
f=1MHz
pF


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